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Advance Product Information
January 17, 2005
33 - 47 GHz Wide Band Driver Amplifier
Key Features
* * * * * * * * *
TGA4522-EPU
Frequency Range: 33 - 47 GHz 27 dBm Nominal Psat @ 38GHz 26 dBm P1dB @ 38 GHz 35 dBm OTOI @ Pin = 18 dBm/Tone 14 dB Nominal Gain @ 38GHz 14 dB Nominal Return Loss @ 38GHz Bias: 6 V @ 400 mA Idq 0.25 um 3MI pHEMT Technology Chip Dimensions 2.00 x 1.45 x 0.10 mm (0.079 x 0.057 x 0.004 in)
Primary Applications
* * * * Digital Radio Point-to-Point Radio Point-to-Multipoint Communications Military SAT-COM
Product Description
The TriQuint TGA4522-EPU is a compact Driver Amplifier MMIC for Ka-band and Q-band applications. The part is designed using TriQuint's proven standard 0.25um power pHEMT production process. The TGA4522-EPU nominally provides 27 dBm saturated output power, and 26 dBm output power at 1dB Gain compression @ 38 GHz. It also has typical gain of 14 dB, and return loss of 12 dB. The part is ideally suited for low cost emerging markets such as Digital Radio, Point-to-Point Radio and Point-to-Multi Point Communications.
30 Output Power (dBm)
Measured Fixtured Data
Bias Conditions: Vd = 6 V, Idq = 400 mA
20 15 10 5 0 -5 -10 -15 -20 -25 -30 32 34
Gain
S-parameter (dB)
IRL ORL
36 38 40 42 44 46 48
Frequency (GHz)
The TGA4522-EPU is 100% DC and RF tested onwafer to ensure performance compliance.
28 26 24 22 20 18 32 34 36 38 40 42 44 46 48 Frequency (GHz)
Psat P1dB
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 1
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
January 17, 2005
TGA4522-EPU
TABLE I MAXIMUM RATINGS 1/ SYMBOL
Vd Vg Id Ig PIN PD TCH TM TSTG 1/ 2/ 3/ 4/
PARAMETER
Drain Voltage Gate Voltage Range Drain Current Gate Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature
VALUE
8V -2 TO 0 V 700 mA 16 mA 23 dBm See note 4/ 150 C 320 C -65 to 150 0C
0 0
NOTES
2/
2/ 3/ 3/
2/ 5/ 6/
These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. Total current for the entire MMIC. For a median life time of 1E+6 hrs, Power dissipation is limited to: PD(max) = (150 0C - TBASE 0C) / 35.5 (0C/W) Where TBASE is the base plate temperature.
5/
Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. These ratings apply to each individual FET.
6/
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 2
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
January 17, 2005
TGA4522-EPU
TABLE II ELECTRICAL CHARACTERISTICS (Ta = 25 0C Nominal)
PARAMETER
Frequency Range Drain Voltage, Vd Drain Current, Id Gate Voltage, Vg Small Signal Gain, S21 Input Return Loss, S11 Output Return Loss, S22 Output Power @ 1dB Gain Compression, P1dB Saturated Power, Psat
TYPICAL
33 - 47 6.0 400 -0.5 13 14 18 26 27
UNITS
GHz V mA V dB dB dB dBm dBm
TABLE III THERMAL INFORMATION
PARAMETER TEST CONDITIONS Vd = 5 V Id = 400 mA Pdiss = 2.0 W TCH O ( C) 140 RTJC (qC/W) 35.5 TM (HRS) 2.4E+6
RJC Thermal Resistance (channel to Case)
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo o Carrier at 50 C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 3
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
January 17, 2005
TGA4522-EPU
Preliminary Measured Data
20 18 16 14 Gain (dB) 12 10
Bias Conditions: Vd = 5-6 V, Idq = 400 mA
5V
6V
8 6 4 2 0 30 32 34 36 38 40 42 44 46 48 50 Frequency (GHz) 20 15 10 5
Bias Conditions: Vd = 6 V, Idq = 400 mA
Return Loss (dB)
0 -5 -10 -15 -20 -25 -30 30 32 34 36 38 40 42 44 46 48 50 Frequency (GHz)
IRL
ORL
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 4
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
January 17, 2005
TGA4522-EPU
Preliminary Measured Data
Bias Conditions: Vd = 4 - 6 V, Idq = 400 mA
28 27 26 25 P1dB (dBm) 24 23 22 21 20 19 18 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 Vd=6V Vd=5V Vd=4V
Frequency (GHz)
28 27 26 25 Psat (dBm) 24 23 22 21 20 19 18 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 5
Vd=6V Vd=5V Vd=4V
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
January 17, 2005
Preliminary Measured Data
28 26 24 Pout (dBm) & Gain (dB) 22 20 18 16 14 12 10 8 6 -8 -6 -4 -2 0 2 4 6 8 10 12
Bias Conditions: Vd = 6 V, Idq = 400 mA, Freq = 38 GHz
TGA4522-EPU
750 700 650 600 550 500 450 400 350 Power Gain Id 14 16 18 300 250 200 Id (mA)
Id (mA)
Pin (dBm)
28 26 24 Pout (dBm) & Gain (dB) 22 20 18 16 14 12 10 8 6 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 Pin (dBm)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 6
750
Bias Conditions: Vd = 5 V, Idq = 400 mA, Freq = 38 GHz
700 650 600 550 500 450 400 350 Power Gain Id 200 300 250
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
January 17, 2005
TGA4522-EPU
Preliminary Measured Data
Bias Conditions: Vd = 6 V, Idq = 400 mA, f=10MHz @ 18dBm/Tone
39 38 37 36 OTOI (dBm) 35 34 33 32 31 30 29 35 35.5 36 36.5 37 37.5 38 38.5 39 39.5 40 40.5 41 Frequency (GHz)
44 42 40 38 36 IMD3 (dBc) 34 32 30 28 26 24 22 20 18 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Output Power / Tone (dBm)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 7
37GHz 38GHz 39GHz 40GHz
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
January 17, 2005
TGA4522-EPU
Mechanical Drawing
0.108 (0.004) 0.261 (0.010) 0.391 (0.015) 0.530 (0.021) 1.352 (0.053) 1.500 (0.059) 1.670 (0.066)
1.450 (0.057) 1.351 (0.053)
2
3
4
5
6
7
1.351 (0.053)
8
1.071 (0.042)
0.398 (0.016)
1
0.129 (0.005) 0.099 (0.004) 0
13
12
11
10
9
R C
B
R C
B
0
0.391 (0.015)
0.530 (0.021)
1.352 (0.053)
1.500 (0.059)
1.670 (0.066)
1.893 (0.075)
2.000 (0.079)
Units: millimeters (inches) Thickness: 0.100 (0.004) Chip edge to bond pad dimensions are shown to center of bond pad Chip size tolerance: +/- 0.051 (0.002) GND is back side of MMIC Bond pad #1 Bond pad #2 Bond pad #3, 13 Bond pad #4, 5, 7, 9, 11, 12 Bond pad #6, 10 Bond pad #8 (RF In) (N/C) (Vg) (Vd) (N/C) (RF Out) 0.100 x 0.150 0.100 x 0.108 0.108 x 0.108 0.108 x 0.108 0.091 x 0.084 0.100 x 0.150 (0.004 x 0.006) (0.004 x 0.004) (0.004 x 0.004) (0.004 x 0.004) (0.004 x 0.003) (0.004 x 0.006)
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 8
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
January 17, 2005
TGA4522-EPU
Recommended Chip Assembly Diagram
Vd
0.01 F
Vg
0.01 F 15 1.0 F
100pF 100pF 100pF
15 1.0 F
TFN (10mil Alumina)
Wedge bonds or ribbons
TFN (10mil Alumina)
Vg
0.01 F 15 1.0 F
100pF 100pF 100pF
Vd
0.01 F 15 1.0 F
To reduce these components (0.01 F, 15 , 1.0 F) connect: Vg @ bottom to Vg @ top Vd @ bottom to Vd @ top Bias Conditions: Vd = 5 - 6 V Vg = ~ -0.5 V to get 400mA Id
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 9
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
January 17, 2005
TGA4522-EPU Assembly Process Notes
Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere.
0
Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. 0 Maximum stage temperature is 200 C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 10
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com

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